Electrostatic discharge protection circuit for preamps connected to magneto-resistive read elements

ABSTRACT

A magnetic storage system comprises a read element and an electrostatic discharge (ESD) protection circuit that includes a shunting device including a first terminal that communicates with a first terminal of the read element and a second terminal that communicates with a second terminal of the read element. The shunting device is conductive when the read element is disabled and nonconductive when the read element is enabled.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.60/513,690, filed on Oct. 23, 2003, which is hereby incorporated byreference in its entirety.

FIELD OF THE INVENTION

The present invention relates to magnetic storage systems, and moreparticularly to magnetic storage systems that include magneto-resistiveread elements.

BACKGROUND OF THE INVENTION

Referring to FIG. 1, an exemplary magnetic storage system 2 such as ahard disk drive is shown. A buffer 3 stores data that is associated withthe control of the hard disk drive. The buffer 3 may employ SDRAM orother types of low latency memory. A processor 4 performs processingthat is related to the operation of the hard disk drive. A hard diskcontroller (HDC) 6 communicates with the buffer 3, the processor 4, ahost 7, a spindle/voice coil motor (VCM) driver 8, and/or a read/writechannel circuit 10.

During a write operation, the read/write channel circuit (or readchannel circuit) 10 encodes the data to be written onto the storagemedium. The read/write channel circuit 10 processes the signal forreliability and may include, for example error correaction coding (ECC),run length limited coding (RLL), and the like. During read operations,the read/write channel circuit 10 converts an analog output from themedium to a digital signal. The converted signal is then detected anddecoded by known techniques to recover the data written on the hard diskdrive.

One or more hard drive platters 11 include a magnetic coating thatstores magnetic fields. The platters 11 are rotated by a spindle motorthat is schematically shown at 12. Generally the spindle motor 12rotates the hard drive platter 11 at a fixed speed during the read/writeoperations. One or more read/write arms 14 move relative to the platters11 to read and/or write data to/from the hard drive platters 11. Thespindle/VCM driver 8 controls the spindle motor 12, which rotates theplatter 11. The spindle/VCM driver 8 also generates control signals thatposition the read/write arm 14, for example using a voice coil actuator,a stepper motor or any other suitable actuator.

A read/write device 15 is located near a distal end of the read/writearm 14. The read/write device 15 includes a write element such as aninductor that generates a magnetic field. The read/write device 15 alsoincludes a read element (such as a magneto-resistive (MR) sensor) thatsenses the magnetic fields on the platter 11. A preamplifier (preamp)circuit 16 amplifies analog read/write signals. When reading data, thepreamp circuit 16 amplifies low level signals from the read element andoutputs the amplified signal to the read/write channel circuit 10. Whilewriting data, a write current that flows through the write element ofthe read/write channel circuit 10 is switched to produce a magneticfield having a positive or negative polarity. The positive or negativepolarity is stored by the hard drive platter 11 and is used to representdata.

Referring now to FIG. 2, the read channel circuit 10 outputs writesignals w_(dx) and w_(dy) to the preamp circuit 16 when writing data.The preamp circuit 16 amplifies the write signals using a writeamplifier 18. The amplified write signals are output to the read/writedevice 15. When reading data, the preamp circuit 16 receives signalsfrom the read/write device 15, amplifies the signals using a readamplifier 19, and outputs amplified read signals r_(dx) and r_(dy) tothe read channel circuit 10.

Some magnetic storage systems employ giant magneto-resistive (GMR)sensors as the read element. GMR sensors are more sensitive to magnetictransitions than MR sensors. For example, the GMR sensors are typicallytwice as sensitive as MR sensors. GMR sensors and other read elementsare highly sensitive to electrostatic discharge (ESD). For example, theGMR sensor may have an ESD voltage tolerance of approximately 1V. GMRsensors are typically biased at 0.5V or lower during normal operatingconditions. The risk of damage to a read element from ESD is greatestduring manufacturing when the circuit is handled. Static discharge mayoccur when the circuit is handled which may damage the read element.

GMR sensors are typically protected from ESD damage by diode shuntingcircuits, which limit the maximum voltage that is applied to the GMRsensor. The maximum voltage is limited to a forward biased turn-onvoltage of a single diode. Silicon junction diodes typically have aforward-biased turn on voltage between 0.7V and 0.8V. Schottky diodestypically have a forward-biased turn-on voltage between 0.4V and 0.5V.

Referring now to FIG. 3, the preamp circuit 16 includes an ESDprotection circuit 30 that limits a maximum voltage that is applied to aread element 32 in the read/write device 15. The ESD protection circuit30 includes first, second, third, and fourth diodes 34, 36, 38 and 40,respectively. An anode of the first diode 34 and a cathode of the seconddiode 36 communicate with a first terminal of the read element 32. Ananode of the third diode 38 and a cathode of the fourth diode 40communicate with a second terminal of the read element 32. A cathode ofthe first diode 34 communicates with an anode of the second diode 36. Acathode of the third diode 38 communicates with an anode of the fourthdiode 40.

The first terminal of the read element 32, the anode of the first diode34, and the cathode of the second diode 36 communicate with a firstcurrent source 42. The second terminal of the read element 32, the anodeof the third diode 38, and the cathode of the fourth diode 40communicate with a second current source 44. The first and secondcurrent sources 42 and 44, respectively, communicate with a supplypotential 46. The cathode of the first diode 34, the anode of the seconddiode 36, the cathode of the third diode 38, and the anode of the fourthdiode 40 communicate with a ground potential 48.

The ESD protection circuit 30 optionally includes fifth and sixth diodes50 and 52, respectively. An anode of the fifth diode 50 and a cathode ofthe sixth diode 52 communicate with the first terminal of the readelement 32 and the first current source 42. A cathode of the fifth diode50 and an anode of the sixth diode 52 communicate with a second terminalof the read element 32 and the second current source 44.

The current sources 42 and 44, respectively, bias the read element 32during normal operation. The diodes 34, 36, 38, 40, 50, and 52 formparallel back-to-back forward-biased diode shunting circuits. The diodeshunting circuits limit a maximum voltage that is applied to the readelement 32 to a forward biased turn-on voltage of one of the diodes 34,36, 38, 40, 50, or 52. The maximum voltage of the shunting circuits istypically 0.7V for silicon junction diodes and 0.4-0.5V for Schottkydiodes. GMR sensors begin to experience stress at 0.6-0.7V. Therefore,the range of protection offered by the diode turn-on voltage ofconventional shunting devices is usually sufficient for GMR sensors.

However, tunneling giant magneto-resistive (TGMR) sensors areincreasingly being used as read elements in magnetic storage systems.TGMR sensors have a very thin tunneling junction and begin to experiencestress at approximately 0.3V. Therefore, the forward-biased turn-onvoltage of either silicon junction diodes or Schottky diodes is not lowenough to protect the TGMR sensor from ESD damage. Additionally, thereare no conventional diodes that have a forward-biased turn-on voltagethat is less than or equal to 0.3V.

SUMMARY OF THE INVENTION

A magnetic storage system according to the present invention comprises aread element and an electrostatic discharge (ESD) protection circuitthat comprises a shunting device including a first terminal thatcommunicates with a first terminal of the read element and a secondterminal that communicates with a second terminal of the read element.The shunting device is conductive when the read element is disabled andnonconductive when the read element is enabled.

In other features, the ESD protection circuit includes a first voltagelimiting circuit that limits voltage that is input to first terminals ofthe shunting device and the read element. The ESD protection circuitincludes a second voltage limiting circuit that limits voltage that isinput to second terminals of the shunting device and the read element.

In other features, the first voltage limiting circuit includes first andsecond diodes. An anode of the first diode and a cathode of the seconddiode communicate with the first terminal of the read element and thefirst terminal of the shunting device. A cathode of the first diode andan anode of the second diode communicate. The second voltage limitingcircuit includes third and fourth diodes. A cathode of the third diodeand an anode of the fourth diode communicate with the second terminal ofthe read element and the second terminal of the shunting device. Ananode of the third diode and a cathode of the fourth diode communicate.

In still other features, the magnetic storage system includes first andsecond current sources. The first terminal of the read element and thefirst terminal of the shunting device communicate with the first currentsource. The second terminal of the read element and the second terminalof the shunting device communicate with the second current source.

In yet other features, a third voltage limiting circuit limits a voltagedrop across the first and second terminals of the shunting device andthe read element. The third voltage limiting circuit includes fifth andsixth diodes. A cathode of the fifth diode and an anode of the sixthdiode communicate with the first terminal of the read element and thefirst terminal of the shunting device. An anode of the fifth diode and acathode of the sixth diode communicate with the second terminal of theread element and the second terminal of the shunting device.

In still other features, the shunting device includes a transistor. Thetransistor includes a depletion mode metal-oxide semiconductorfield-effect transistor (MOSFET). The read element includes a tunnelinggiant magneto-resistive (TGMR) sensor.

In other features, a voltage tolerance of the read element is less than0.4 volts.

An electrostatic discharge (ESD) protection circuit according to thepresent invention for a read element in a magnetic storage systemcomprises a shunting device that includes first and second terminalsthat are connected to the read element. The shunting device provides aconductive path between the first and second terminals when the readelement is disabled and a nonconductive path between the first andsecond terminals when the read element is enabled.

In other features, a first voltage limiting circuit limits a maximumvoltage that is applied to the first terminal of the shunting device. Inother features, the first voltage limiting circuit includes first andsecond diodes. An anode of the first diode and a cathode of the seconddiode communicate with a first terminal of the shunting device. Acathode of the first diode and an anode of the second diode communicate.A second voltage limiting circuit limits a voltage that is applied to asecond terminal of the shunting device. The second voltage limitingcircuit includes third and fourth diodes. A cathode of the third diodeand an anode of the fourth diode communicate with a second terminal ofthe shunting device. An anode of the third diode and a cathode of thefourth diode communicate.

A magnetic storage system comprises the ESD protection circuit andfurther comprises first and second current sources. The first terminalof the shunting device communicates with the first current source. Thesecond terminal of the shunting device communicates with the secondcurrent source.

A third voltage limiting circuit limits a voltage drop across the firstand second terminals of the shunting device. The third voltage limitingcircuit includes fifth and sixth diodes. A cathode of the fifth diodeand an anode of the sixth diode communicate with the first terminal ofthe shunting device. An anode of the fifth diode and a cathode of thesixth diode communicate with the second terminal of the shunting device.

In other features, the shunting device includes a transistor. Thetransistor includes a depletion mode metal-oxide semiconductorfield-effect transistor (MOSFET).

A magnetic storage system comprises the ESD protection circuit andfurther comprises the read element. The read element includes atunneling giant magneto-resistive (TGMR) sensor.

In other features, a voltage tolerance of the read element is less than0.4 volts.

Further areas of applicability of the present invention will becomeapparent from the detailed description provided hereinafter. It shouldbe understood that the detailed description and specific examples, whileindicating the preferred embodiment of the invention, are intended forpurposes of illustration only and are not intended to limit the scope ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from thedetailed description and the accompanying drawings, wherein:

FIG. 1 is a functional block diagram of an exemplary data storage deviceaccording to the prior art;

FIG. 2 is a functional block diagram of a read channel circuit andpreamp circuit according to the prior art;

FIG. 3 is an electrical schematic of a preamp that includes anelectrostatic discharge (ESD) protection circuit for a giantmagneto-resistive (GMR) sensor according to the prior art;

FIG. 4 is an electrical schematic of a first ESD protection circuit thatincludes a shunting device for a read element according to the presentinvention;

FIG. 5 is an electrical schematic of a second ESD protection circuitthat includes a shunting device for a read element according to thepresent invention; and

FIG. 6 is an electrical schematic of a third ESD protection circuit thatincludes a shunting transistor for a read element according to thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The following description of the preferred embodiment(s) is merelyexemplary in nature and is in no way intended to limit the invention,its application, or uses. For purposes of clarity, the same referencenumbers will be used in the drawings to identify similar elements.

During manufacturing, one or more components in the magnetic storagesystem may be handled. The risk of damage to a tunneling giantmagneto-resistive (TGMR) sensor or other read element from electrostaticdischarge (ESD) is particularly high during this time. However, once themagnetic storage system is fully assembled and sealed, the risk ofdamage from ESD is reduced. Therefore, the risk of damage to the readelement from ESD is greatest when the read element is disabled.

Referring now to FIG. 4, an ESD protection circuit 59 in a preampcircuit 60 of a magnetic storage system 62 is shown. The ESD protectioncircuit includes a shunting device 64 that protects a read element 66from ESD damage when the read element 66 is disabled. A first terminalof the shunting device 64 communicates with a first terminal of the readelement 66. A second terminal of the shunting device 64 communicateswith a second terminal of the read element 66. For example in oneimplementation, the read element 66 may include a TGMR sensor, althoughother types of read elements may be used. For example, conventional readelements such as MR and GMR sensors can also be used. In addition,future MR and non-MR read elements having a sensitivity less than 0.4Vcan also be used.

The ESD protection circuit 59 further includes a first voltage limitingcircuit 80 that is connected between first terminals of the read element66 and the shunting device 64 and a reference potential 84 such asground. A second voltage limiting circuit 86 is connected between secondterminals of the read element 66 and the shunting device 64 and thereference potential 84. An optional third voltage limiting circuit 90has first and second terminals that are connected to the first terminaland second terminals, respectively, of the read element 66 and theshunting device 64. The voltage limiting circuits 80, 86 and 90 limitthe positive and/or negative voltage drops by shorting the first andsecond terminals of the voltage limiting circuits 80, 86 and 90 when thevoltage across the first and second terminals exceeds first, second andthird predetermined voltage levels, respectively. In one implementation,the predetermined voltage levels are less than 0.4V.

The preamp circuit 60 further includes a first current source 100 thatis connected to the first terminals of the shunting device 64 and theread element 66. A second current source 104 is connected to the secondterminals of the read element 66 and the shunting device 64. The firstand second current sources 100 and 104 are biased by voltage supplies108 and 110.

Referring now to FIG. 5, in one embodiment of the ESD protection circuit59, the first voltage limiting circuit 80 may include first and seconddiodes 118 and 120, respectively. The second voltage limiting circuit 86may include third and fourth diodes 122 and 124, respectively. As can beappreciated by skilled artisans, there are many other suitable voltagelimiting circuits that can be used including, but not limited to,voltage limiting circuits including comparing circuits, transistors,voltage dividers, and/or other components.

An anode of the first diode 118 and a cathode of the second diode 120communicate with the first terminal of the read element 66 and the firstterminal of the shunting device 64. A cathode of the third diode 122 andan anode of the fourth diode 124 communicate with the second terminal ofthe read element 66 and the second terminal of the shunting device 124.A cathode of the first diode 118 and an anode of the second diode 120communicate. An anode of the third diode 122 and a cathode of the fourthdiode 124 communicate.

The first terminal of the read element 66, the anode of the first diode118, the cathode of the second diode 120, and the first terminal of theshunting device 124 communicate with the first current source 100. Thesecond terminal of the read element 66, the cathode of the third diode122, the anode of the fourth diode 124, and a second terminal of theshunting device 64 communicate with a second current source 104. Thecathode of the first diode 118, the anode of the second diode 120, theanode of the third diode 122, and the cathode of the fourth diode 124communicate with the reference potential 84.

The optional third voltage limiting circuit 90 may include fifth andsixth diodes 134 and 136, respectively. A cathode of the fifth diode 134and an anode of the sixth diode 136 communicate with the first terminalof the read element 66 and the first terminal of the shunting device 64.An anode of the fifth diode 134 and a cathode of the sixth diode 136communicate with the second terminal of the read element 66 and thesecond terminal of the shunting device 64.

The current sources 100 and 104, respectively, bias the read element 66during normal operation. The shunting device 64 is conductive while theread element 66 is disabled (or not reading) and is nonconductive whilethe read element 66 is enabled (or reading). Therefore, the shuntingdevice 64 shorts the read element 66 when the read element 66 isdisabled to protect the read element 66 from ESD damage.

A control voltage 138 that is applied to a control terminal of theshunting device 64 controls the shunting device 64 such that it iseither conductive or nonconductive. For example, the control voltage 138may be referenced from a power terminal of the preamp circuit 60.Alternatively, the control voltage 138 may be referenced from anexclusive power terminal for the read/write device 67 and/or the readelement 66 alone. This allows the shunting device 64 to remainconductive while the preamp circuit 60 is powered and the read/writedevice 67 is unpowered. If the control voltage 138 is referenced from apower terminal of the read element 66 alone, this allows a write elementin the read/write device 67 to remain operational while the read element66 is disabled.

As in the prior art ESD protection circuit 30 shown in FIG. 3, thediodes 118, 120, 122, 124, 134, and 136 form parallel back-to-backforward-biased diode shunting circuits. In FIG. 5, the diode shuntingcircuits limit a maximum voltage that is applied to the shunting device64 as well as the read element 66. The maximum voltage is limited to theforward-biased turn-on voltage of the diodes 68, 70, 72, 74, 84, or 86,which is typically 0.7V for silicon junction diodes and 0.4-0.5V forSchottky diodes. Therefore, while the shunting device 64 protects theread element 66 from ESD damage when the read element is disabled, thediode shunting circuits protect both the shunting device 64 and the readelement 66 from high voltage events when the read element is enabled.

It is desirable for the shunting device 64 to function as a shortcircuit when the read element 66 is disabled and an open circuit whenthe read element 66 is enabled. In this case, the shunting device 64does not interfere with the read element 66 during normal operation. Inorder to protect against several volt ESD events, the shunting device 64shorts opposite terminals of the read element 66.

Referring now to FIG. 6, the shunting device 64 is preferably anormally-on transistor such as a depletion mode MOSFET. While a PMOSdepletion mode transistor is shown, an NMOS depletion mode transistor, aJFET transistor and/or any other suitable transistor may be used.Commercially available transistors may not appropriately meet therequirements for the shunting device in a specific ESD protectioncircuit. However, the shunting device may be fabricated to suit theneeds of any application. For example, a semiconductor device may beimplanted or doped to operate as a depletion mode device. However, it isimportant to ensure that the shunting device 64 does not interfere withthe read signal from the read element 66 during operation.

Although the risk of ESD damage to the read element 66 is greatestduring manufacturing, the shunting device 64 according to the presentinvention can continue to protect the read element 66 after a hard diskdrive is sealed and assembled. For example, the read/write device mayonly be powered when the read element or the write element in theread/write device are currently operating. Since the magnetic storagesystem typically includes multiple read/write devices, the shuntingdevices remain conductive to protect read elements in read/write devicesthat are not currently in use. The shunting devices that protect theread elements that are currently reading data at a given time arenonconductive.

The present invention is an improvement over conventional ESD protectioncircuits that rely solely on diode shunting circuits. Diode shuntingcircuits do not reliably protect read elements with voltage tolerancesthat are less than 0.4V. Even if diodes with forward-biased turn-onvoltages less than 0.4V are developed, the diodes will usually displayexponential characteristics that may interfere with normal operation ofthe read/write device. Whenever an appreciable amount of current flowsthrough the diode, the diode has the potential to add noise to themagnetic storage system. The present invention solves this problem inpart by utilizing the shunting device that does not conduct current whenthe read element is enabled. This allows for reliable protection of TGMRsensors and other read elements in magnetic storage systems.

Those skilled in the art can now appreciate from the foregoingdescription that the broad teachings of the present invention can beimplemented in a variety of forms. Therefore, while this invention hasbeen described in connection with particular examples thereof, the truescope of the invention should not be so limited since othermodifications will become apparent to the skilled practitioner upon astudy of the drawings, specification, and the following claims.

1. A magnetic storage system, comprising: a read element; and anelectrostatic discharge (ESD) protection circuit that comprises ashunting device including a first terminal that communicates with afirst terminal of said read element and a second terminal thatcommunicates with a second terminal of said read element, wherein saidshunting device includes a normally ON transistor that receives avoltage control signal based on a read state of said read element and isconductive when said read element is disabled and nonconductive whensaid read element is enabled.
 2. The magnetic storage system of claim 1wherein said ESD protection circuit includes a first voltage limitingcircuit that limits voltage that is input to first terminals of saidshunting device and said read element.
 3. The magnetic storage system ofclaim 2 wherein said ESD protection circuit includes a second voltagelimiting circuit that limits voltage that is input to second terminalsof said shunting device and said read element.
 4. The magnetic storagesystem of claim 3 wherein said second voltage limiting circuit includesthird and fourth diodes, a cathode of said third diode and an anode ofsaid fourth diode communicate with said second terminal of said readelement and said second terminal of said shunting device, and an anodeof said third diode and a cathode of said fourth diode communicate. 5.The magnetic storage system of claim 2 wherein said first voltagelimiting circuit includes first and second diodes, wherein an anode ofsaid first diode and a cathode of said second diode communicate withsaid first terminal of said read element and said first terminal of saidshunting device and a cathode of said first diode and an anode of saidsecond diode communicate.
 6. The magnetic storage system of claim 1further comprising first and second current sources, wherein said firstterminal of the read element and said first terminal of said shuntingdevice communicate with said first current source and wherein saidsecond terminal of said read element and said second terminal of saidshunting device communicate with said second current source.
 7. Themagnetic storage system of claim 1 further comprising a third voltagelimiting circuit that limits a voltage drop across said first and secondterminals of said shunting device and said read element.
 8. The magneticstorage system of claim 7 wherein said third voltage limiting circuitincludes fifth and sixth diodes, wherein a cathode of said fifth diodeand an anode of said sixth diode communicate with said first terminal ofsaid read element and said first terminal of said shunting device andwherein an anode of said fifth diode and a cathode of said sixth diodecommunicate with said second terminal of said read element and saidsecond terminal of said shunting device.
 9. The magnetic storage systemof claim 1 wherein said shunting device includes a normally-ontransistor.
 10. The magnetic storage system of claim 1 wherein saidtransistor includes one of a depletion mode metal-oxide semiconductorfield-effect transistor (MOSFET) and a JFET.
 11. The magnetic storagesystem of claim 1 further comprising a preamp circuit, wherein said ESDprotection circuit is implemented in said preamp circuit of saidmagnetic storage system.
 12. The magnetic storage system of claim 1wherein said read element is one of a magneto-resistive (MR) sensor, agiant magneto-resistive (GMR) sensor, and a tunneling giantmagneto-resistive (TGMR) sensor.
 13. The magnetic storage system ofclaim 1 wherein a voltage tolerance of said read element is less than0.4 volts.
 14. The magnetic storage system of claim 1 wherein saidshunting device is conductive based on a read state of said read elementindependent of detection of an ESD event.
 15. The magnetic storagesystem of claim 14 wherein said shunting device is conductive when saidread element is disabled.
 16. The magnetic storage system of claim 14wherein said shunting device is conductive both when an ESD event isdetected and when an ESD event is not detected.
 17. The magnetic storagesystem of claim 1 wherein said read element is shunted when disabled andis not shunted when enabled independent of detection of read informationby said read element.
 18. The magnetic storage system of claim 17wherein said read element receives current flow from a current sourcewhen enabled and does not receive current flow from said current sourcewhen disabled.
 19. The magnetic storage system of claim 1 wherein saidread element is shunted via said transistor when said read element isdisabled, and wherein voltage across said read element is limited viadiodes when said read element is enabled.
 20. An electrostatic discharge(ESD) protection circuit for a read element in a magnetic storagesystem, comprising: a shunting device that includes: a first terminalthat communicates with a first terminal of the read element; and asecond terminal that communicates with a second terminal of the readelement, wherein said shunting device includes a normally ON transistorand provides a conductive path between said first and second terminalsof said shunting device when the read element is disabled and anonconductive path between said first and second terminals of saidshunting device when the read element is enabled.
 21. The ESD protectioncircuit of claim 20 further comprising a first voltage limiting circuitthat limits a maximum voltage that is applied to said first terminal ofsaid shunting device.
 22. The ESD protection circuit of claim 20 whereinsaid first voltage limiting circuit includes first and second diodes,wherein an anode of said first diode and a cathode of said second diodecommunicate with a first terminal of said shunting device and a cathodeof said first diode and an anode of said second diode communicate. 23.The ESD protection circuit of claim 20 further comprising a secondvoltage limiting circuit that limits a voltage that is applied to asecond terminal of said shunting device.
 24. The ESD protection circuitof claim 23 wherein said second voltage limiting circuit includes thirdand fourth diodes, a cathode of said third diode and an anode of saidfourth diode communicate with a second terminal of said shunting device,and an anode of said third diode and a cathode of said fourth diodecommunicate.
 25. A magnetic storage system comprising the ESD protectioncircuit of claim 20 and further comprising first and second currentsources, wherein said first terminal of said shunting devicecommunicates with a first current source and said second terminal ofsaid shunting device communicates with a second current source.
 26. TheESD protection circuit of claim 20 further comprising a third voltagelimiting circuit that limits a voltage drop across said first and secondterminals of said shunting device.
 27. The ESD protection circuit ofclaim 26 wherein said third voltage limiting circuit includes fifth andsixth diodes, wherein a cathode of said fifth diode and an anode of saidsixth diode communicate with said first terminal of said shunting deviceand wherein an anode of said fifth diode and a cathode of said sixthdiode communicate with said second terminal of said shunting device. 28.The ESD protection circuit of claim 20 wherein said transistor is one ofa depletion mode metal-oxide semiconductor field-effect transistor(MOSFET) and a JFET.
 29. A magnetic storage system comprising the ESDprotection circuit of claim 20 and further comprising said read element.30. The magnetic storage system of claim 29 wherein said read element isone of a magneto-resistive (MR) sensor, a giant magneto-resistive (GMR)sensor, and a tunneling giant magneto-resistive (TGMR) sensor.
 31. Themagnetic storage system of claim 29 wherein a voltage tolerance of saidread element is less than 0.4 volts.
 32. A magnetic storage system,comprising: reading means for reading magnetic fields; and electrostaticdischarge (ESD) protecting means that comprises a shunting means forshunting and including a first terminal that communicates with a firstterminal of said reading means and a second terminal that communicateswith a second terminal of said reading means, wherein said shuntingmeans includes a normally ON transistor and is conductive when saidreading means is disabled and nonconductive when said reading means isenabled.
 33. The magnetic storage system of claim 32 wherein said ESDprotecting means includes first voltage limiting means for limiting avoltage input to first terminals of said shunting means and said readingmeans.
 34. The magnetic storage system of claim 33 wherein said ESDprotecting means include second voltage limiting means for limiting avoltage input to second terminals of said shunting means and saidreading means.
 35. The magnetic storage system of claim 34 wherein saidsecond voltage limiting means includes third and fourth diodes, acathode of said third diode and an anode of said fourth diodecommunicate with said second terminal of said reading means and saidsecond terminal of said shunting means, and an anode of said third diodeand a cathode of said fourth diode communicate.
 36. The magnetic storagesystem of claim 33 wherein said first voltage limiting means includesfirst and second diodes, wherein an anode of said first diode and acathode of said second diode communicate with said first terminal ofsaid reading means and said first terminal of said shunting means and acathode of said first diode and an anode of said second diodecommunicate.
 37. The magnetic storage system of claim 32 furthercomprising first and second current means for providing current, whereinsaid first terminal of the reading means and said first terminal of saidshunting means communicate with said first current means and whereinsaid second terminal of said reading means and said second terminal ofsaid shunting means communicates with said second current means.
 38. Themagnetic storage system of claim 32 further comprising third voltagelimiting means for limiting a voltage drop across said first and secondterminals of said shunting means and said reading means.
 39. Themagnetic storage system of claim 38 wherein said third voltage limitingmeans includes fifth and sixth diodes, wherein a cathode of said fifthdiode and an anode of said sixth diode communicate with said firstterminal of said reading means and said first terminal of said shuntingmeans and wherein an anode of said fifth diode and a cathode of saidsixth diode communicate with said second terminal of said reading meansand said second terminal of said shunting means.
 40. The magneticstorage system of claim 32 wherein said transistor is one of a depletionmode metal-oxide semiconductor field-effect transistor (MOSFET) and aJFET.
 41. The magnetic storage system of claim 32 further comprising apreamp means for amplifying a signal output by said reading means,wherein said ESD protecting means is implemented in said preamp means ofsaid magnetic storage system.
 42. The magnetic storage system of claim32 wherein said reading means is one of a magneto-resistive (MR) sensor,a giant magneto-resistive (GMR) sensor, and a tunneling giantmagneto-resistive (TGMR) sensor.
 43. The magnetic storage system ofclaim 32 wherein a voltage tolerance of said reading means is less than0.4 volts.
 44. An electrostatic discharge (ESD) protecting circuit for aread element in a magnetic storage system, comprising: shunting meansfor protecting the read element from ESD and that includes: a firstterminal that communicates with a first terminal of the read element;and a second terminal that communicates with a second terminal of theread element, wherein said shunting means includes a transistor thatreceives a voltage control signal based on a read state of said readelement and provides a conductive path between said first and secondterminals of said shunting means when the read element is disabled and anonconductive path between said first and second terminals of saidshunting means when the read element is enabled.
 45. The ESD protectioncircuit of claim 44 further comprising first voltage limiting means forlimiting a maximum voltage that is applied to said first terminal ofsaid shunting means.
 46. The ESD protection circuit of claim 45 whereinsaid first voltage limiting means includes first and second diodes,wherein an anode of said first diode and a cathode of said second diodecommunicate with a first terminal of said shunting means and a cathodeof said first diode and an anode of said second diode communicate. 47.The ESD protection circuit of claim 44 further comprising second voltagelimiting means for limiting a voltage that is applied to a secondterminal of said shunting means.
 48. The ESD protection circuit of claim47 wherein said second voltage limiting means includes third and fourthdiodes, a cathode of said third diode and an anode of said fourth diodecommunicate with a second terminal of said shunting means, and an anodeof said third diode and a cathode of said fourth diode communicate. 49.A magnetic storage system comprising the ESD protection circuit of claim44 and further comprising first and second current means for supplyingcurrent, wherein said first terminal of said shunting means communicateswith a first current means and said second terminal of said shuntingmeans communicates with a second current means.
 50. The ESD protectioncircuit of claim 44 further comprising third voltage limiting means forlimiting a voltage drop across said first and second terminals of saidshunting means.
 51. The ESD protection circuit of claim 50 wherein saidthird voltage limiting means includes fifth and sixth diodes, wherein acathode of said fifth diode and an anode of said sixth diode communicatewith said first terminal of said shunting means and wherein an anode ofsaid fifth diode and a cathode of said sixth diode communicate with saidsecond terminal of said shunting means.
 52. The ESD protection circuitof claim 44 wherein said transistor is one of a depletion modemetal-oxide semiconductor field-effect transistor (MOSFET) and a JFET.53. A magnetic storage system comprising the ESD protection circuit ofclaim 44 and further comprising said read element.
 54. The magneticstorage system of claim 53 wherein said read element is one of amagneto-resistive (MR) sensor, a giant magneto-resistive (GMR) sensor,and a tunneling giant magneto-resistive (TGMR) sensor.
 55. The magneticstorage system of claim 53 wherein a voltage tolerance of said readelement is less than 0.4 volts.
 56. A method of operating a magneticstorage system, comprising: reading magnetic fields using a read elementhaving first and second terminals; and shorting said first and secondterminals of said read element when said reading means is disabled via atransistor, which receives a voltage control signal based on a readstate of said read element.
 57. The method of claim 56 furthercomprising: using a shunting device to perform said shorting step; andlimiting a voltage input to a first terminal of said shunting device andsaid first terminal of said read element.
 58. The method of claim 57further comprising limiting a voltage input to second terminals of saidshunting device and said read element.
 59. The method of claim 57further comprising limiting a voltage drop across said first and secondterminals of said shunting device and said read element.
 60. The methodof claim 57 wherein said shunting device includes a normally-ontransistor.
 61. The method of claim 56 wherein said transistor includesone of a depletion mode metal-oxide semiconductor field-effecttransistor (MOSFET).
 62. The method of claim 56 wherein said readelement is one of a magneto-resistive (MR) sensor, a giantmagneto-resistive (GMR) sensor, and a tunneling giant magneto-resistive(TGMR) sensor.
 63. The method of claim 56 wherein a voltage tolerance ofsaid read element is less than 0.4 volts.